Sentaurus Process
10. Special Focus: Three-dimensional Examples

10.1 Overview
10.2 Three-dimensional Setup without Implantation and Diffusion
10.3 Three-dimensional Setup with Implantation and Diffusion
10.4 Switching from 2D to 3D

Objectives

• To show 3D operations in Sentaurus Process using the MGOALS3D library.

10.1 Overview

Sentaurus Process can perform all process steps, except for oxidation, in three dimensions as well. Implantation and diffusion steps do not require any special considerations in three dimensions, except for the fact that each of these steps takes significantly longer to complete when performed in three dimensions as opposed to two dimensions. As such, using a coarser mesh in three dimensions is recommended.

For process steps that change the structure, however, special care must be taken. These steps include etching, deposition, photo, strip, reflection, and cut. While the syntax in three dimensions is equivalent to two dimensions, the operations are more complicated and may require simplifications.

Before starting any 3D project, it is a good idea to build the project in two dimensions and ensure it runs. Since simulations take longer in three dimensions, this may save a lot of time if the input is incorrect or does not produce the required results.

After the project runs in two dimensions, 3D input can be created by adding line z commands, which will make the initial structure 3D. It is recommended that initially the implantation and diffusion steps are switched off, so that only structure-modifying steps remain. These run relatively fast and, therefore, can be used to check whether the final structure is correct.

10.2 Three-dimensional Setup without Implantation and Diffusion

A few points are worth noting when setting up the initial flow without implantation and diffusion steps. The structure-modifying steps (etch, deposition, photo, transform) take very little time, but mesh generation in three dimensions can be slow. The following suggestions will minimize the number of times Sentaurus Process needs to generate the 3D mesh and, therefore, will make the simulations run faster:

• Use pdbSet Mechanics EtchDepoRelax 0. This switches off stress relaxation after etching and deposition steps and, therefore, switches off mesh generation after every step.
• Use struct tdr.bnd=... to save the structure at intermediate steps rather than struct tdr=.... This avoids mesh generation when saving the structure and, therefore, speeds up the simulation. Therefore, it is recommended that the structure is saved after every etch/deposition/photo step to observe its evolution.
• When inserting #split commands to split the process flow in Sentaurus Workbench, try to put them either immediately before or immediately after an implantation or a diffusion step. If #split is inserted between two structure-modifying steps such as etch, deposition, or photo, it will force an unnecessary mesh generation.

An example of a 3D setup without implantation and diffusion steps can be found in the project Applications_Library/GettingStarted/sprocess/SmallMOS_NoDiff.

Click to view the command file sprocess_fps.cmd.

The simulation generates a TDR boundary file at every structure-modifying step. These boundary files are plotted in Figure 1. The evolution of the structure can be observed.

Figure 1. Sample 3D MOS flow without implantation and diffusion. (Click image for full-size view.)

10.3 Three-dimensional Setup with Implantation and Diffusion

After satisfactory results are obtained for the structure-modifying steps, implantation and diffusion steps can be switched on again. At this point, saving the structure with struct tdr.bnd=... is no longer necessary, but the other recommendations should be followed.

The example 3D project with the implantation and diffusion steps can be found in the directory Applications_Library/GettingStarted/sprocess/SmallMOS_Full.

Click to view the command file sprocess_fps.cmd.

The project also includes remeshing for device simulation with Sentaurus Process, as well as device simulation with Sentaurus Device. The results of the 3D Sentaurus Process simulation are shown in Figure 2.

Figure 2. Sample 3D MOS flow with implantation and diffusion. (Click image for full-size view.)

10.4 Switching from 2D to 3D

As in 2D simulations, Sentaurus Process keeps the initial structure in 1D mode before an etch with a mask is encountered. As soon as the first 3D mask is encountered, the structure is extended to three dimensions according to the size specified by the line y and line z commands. Even in cases where the first mask is only one-directional (for example, a strip that extends beyond the simulation domain), the structure does not become 2D. Sentaurus Process does not differentiate between masks that would keep the structure 2D or masks that would make the structure 3D.

However, it may sometimes be desirable to keep the structure in two dimensions as long as possible, so that oxidation can be performed. In such cases, you must explicitly state when to switch to 3D simulation.

This is achieved by initializing the simulation in two dimensions, that is, by specifying only line x and line y commands. After the 2D simulations are performed as usual, line z commands are used to extend the structure to three dimensions. After that point, the simulation becomes 3D.

The example 3D project where the switch from 2D to 3D is performed manually can be found in the directory Applications_Library/GettingStarted/sprocess/SmallMOS_2D3D.

Click to view the command file sprocess_fps.cmd.

The results of Sentaurus Process are shown in Figure 3. Note that in contrast to Figure 2, the initial plot is 2D since it is before the switch to 3D occurred.

Figure 3. Sample MOS flow where the structure is switched from 2D to 3D manually. (Click image for full-size view.)